Document Type: Original Research Paper


Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University


In this paper, photodetection properties of a Graphene-based device at
the third telecommunication window have been reported. The structure
of the device is a Graphene-silicon Schottky junction which has been
simulated in the form of an infrared photodetector. Graphene has specific
electrical and optical properties which makes this material a good
candidate for optoelectronic applications. Photodetection characteristic
of Graphene-silicon Schottky junction is investigated by measuring the
(current-voltage) curve at the third telecommunication window under
1550nm radiations. The DC electrical characteristic of the device is
calculated. The simulated rectifier junction has a potential barrier of
0.31eV, the ideality factor of 2.7 and the saturation current of 10-11A. The
detector responsivity under 1550nm radiations is measured about
20mA/W which is an order of magnitude larger than other Si-based
detectors in this wavelength. The internal quantum efficiency (QEin) is
calculated about 60% while the external quantum efficiency (QEex) is
measured to be 1.6%. A comprehensive theoretical justification is
presented based on Fowler theory which allows comparison between the
simulation results and the theoretical predictions. For simulating
Graphene, a user-defined material is introduced to TCAD-SILVACO
software which includes all electrical and optical properties of this novel
2D material. Graphene optical properties, specifically at near-IR region
(up to 2um wavelength), have been extracted from the real measurement
results. Graphene is a Si-compatible material which can provide a
sensitive IR detector integrated with other Si-based devices

Graphical Abstract


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