1. Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel

M. Karbalaei; D. Dideban; N. Moezi

Volume 7, Issue 1 , Winter and Spring 2019, , Pages 27-34

  In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated. DWG SP RD-TFET is a Silicon-channel TFET with two isolated metal gates (main gate and auxiliary gate) and a source pocket in the channel close to the source-channel ...  Read More