1. Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Z. Kordrostami; S. Hamedi; F. Khalifeh

Articles in Press, Corrected Proof, Available Online from 01 November 2019

  In this paper, two developed designs of InGaAs/InAlAs high electron mobility transistors (HEMTs) have been studied. The proposed laterally contacted HEMTs satisfy the desired high frequency characteristics and are good candidates for high frequency applications. Two kinds of HEMTs have been designed ...  Read More