Electronics
1. Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel

M. Karbalaei; D. Dideban; N. Moezi

Volume 7, Issue 1 , Winter and Spring 2019, , Pages 27-33

http://dx.doi.org/10.22061/jecei.2019.5739.252

Abstract
  Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated. Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor is a Silicon-channel TFET ...  Read More