Shahid Rajaee Teacher Training University Journal of Electrical and Computer Engineering Innovations (JECEI) 2322-3952 5 1 2017 01 01 Simulation of IR Detector at Communication Window of 1550nm based on Graphene 71 77 694 EN A. Sotoudeh Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University A. Rajabi Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University M. Amirmazlaghani Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University Journal Article 2017 06 10 In this paper, photodetection properties of a Graphene-based device at <br />the third telecommunication window have been reported. The structure <br />of the device is a Graphene-silicon Schottky junction which has been <br />simulated in the form of an infrared photodetector. Graphene has specific <br />electrical and optical properties which makes this material a good <br />candidate for optoelectronic applications. Photodetection characteristic <br />of Graphene-silicon Schottky junction is investigated by measuring the <br />(current-voltage) curve at the third telecommunication window under <br />1550nm radiations. The DC electrical characteristic of the device is <br />calculated. The simulated rectifier junction has a potential barrier of <br />0.31eV, the ideality factor of 2.7 and the saturation current of 10-11A. The <br />detector responsivity under 1550nm radiations is measured about <br />20mA/W which is an order of magnitude larger than other Si-based <br />detectors in this wavelength. The internal quantum efficiency (QEin) is <br />calculated about 60% while the external quantum efficiency (QEex) is <br />measured to be 1.6%. A comprehensive theoretical justification is <br />presented based on Fowler theory which allows comparison between the <br />simulation results and the theoretical predictions. For simulating <br />Graphene, a user-defined material is introduced to TCAD-SILVACO <br />software which includes all electrical and optical properties of this novel <br />2D material. Graphene optical properties, specifically at near-IR region<br />(up to 2um wavelength), have been extracted from the real measurement <br />results. Graphene is a Si-compatible material which can provide a <br />sensitive IR detector integrated with other Si-based devices https://jecei.sru.ac.ir/article_694_a86072582c76b0185ebbce57c170b052.pdf