Electronics
Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Z. Kordrostami; S. Hamedi; F. Khalifeh

Volume 7, Issue 2 , July 2019, , Pages 155-162

https://doi.org/10.22061/jecei.2020.6256.292

Abstract
  Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of InGaAs/InAlAs high electron mobility transistors ...  Read More