Electronics
Z. Kordrostami; S. Hamedi; F. Khalifeh
Articles in Press, Corrected Proof, Available Online from 01 November 2019
Abstract
In this paper, two developed designs of InGaAs/InAlAs high electron mobility transistors (HEMTs) have been studied. The proposed laterally contacted HEMTs satisfy the desired high frequency characteristics and are good candidates for high frequency applications. Two kinds of HEMTs have been designed ...
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In this paper, two developed designs of InGaAs/InAlAs high electron mobility transistors (HEMTs) have been studied. The proposed laterally contacted HEMTs satisfy the desired high frequency characteristics and are good candidates for high frequency applications. Two kinds of HEMTs have been designed and simulated: single-gate laterally contacted HEMT (SGLC-HEMT) and double-gate laterally contacted HEMT (DGLC-HEMT). The proposed SGLC-HEMT exhibits 111 GHz current-gain cut-off frequency. By using double-gate design, the current-gain cut-off frequency has been increased to 256 GHz. The simulation results show that the maximum oscillation frequency for the proposed SGLC and DGLC HEMTs, are 410 GHz and 768 GHz, respectively. Maximum value of transconductance (gm) for SGLC-HEMT is obtained 620 mS/mm while it is 1130 mS/mm for DGLC-HEMT.
