1. Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Z. Kordrostami; S. Hamedi; F. Khalifeh

Volume 7, Issue 2 , Summer and Autumn 2019, , Pages 155-162


  Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research. Methods: Two developed designs of InGaAs/InAlAs high electron mobility transistors ...  Read More