Electronics
1. A Novel Low-Power FPGA-based 1-1 MASH ΔΣ Time-to-Digital Converter Employing one Counter for both Stages

A. Mouri Zadeh Khaki; E. Farshidi

Articles in Press, Accepted Manuscript, Available Online from 30 April 2020

Abstract
  In this paper, a novel continuous-time 1-1 MASH ∆∑ Time-to-digital converter (TDC) is presented. Since the proposed design utilizes 12-bit quantizer based on Gated Switched-Ring Oscillator (GSRO) for both stages, it has been implemented all-digitally. By using a novel structure, only one multi-bit ...  Read More

Electronics
2. Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Z. Kordrostami; S. Hamedi; F. Khalifeh

Articles in Press, Corrected Proof, Available Online from 01 November 2019

Abstract
  In this paper, two developed designs of InGaAs/InAlAs high electron mobility transistors (HEMTs) have been studied. The proposed laterally contacted HEMTs satisfy the desired high frequency characteristics and are good candidates for high frequency applications. Two kinds of HEMTs have been designed ...  Read More

Electronics
3. Low Computational Complexity and High Computational Speed in Leading DCD ERLS Algorithm

F. Abdi; P. Amiri; M.H. Refan

Volume 7, Issue 1 , Winter and Spring 2019, , Pages 19-26

Abstract
  Adaptive algorithm adjusts the system coefficients based on the measured data. This paper presents a dichotomous coordinate descent method to reduce the computational complexity and to improve the tracking ability based on the variable forgetting factor. Vedic mathematics is used to implement the multiplier ...  Read More

Electronics
4. Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel

M. Karbalaei; D. Dideban; N. Moezi

Volume 7, Issue 1 , Winter and Spring 2019, , Pages 27-34

Abstract
  In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated. DWG SP RD-TFET is a Silicon-channel TFET with two isolated metal gates (main gate and auxiliary gate) and a source pocket in the channel close to the source-channel ...  Read More

Electronics
5. Image Registration Based on Sum of Square Difference Cost Function

J. Khosravi; M. Shams Esfandabadi; R. Ebrahimpour

Volume 6, Issue 2 , Summer and Autumn 2018, , Pages 263-271

Abstract
  There are numerous applications for image registration (IR). The main purpose of the IR is to find a map between two different situation images. In this way, the main objective is to find this map to reconstruct the target image as optimum as possible. Needless to say, the IR task is an optimization ...  Read More

Electronics
6. Room Temperature Methanol Sensor Based on Ferrite Cobalt (CoFe2O4) Porous Nanoparticles

P. Halvaee; M.S. Beigi

Volume 6, Issue 2 , Summer and Autumn 2018, , Pages 209-216

Abstract
  In this work, porous nanoparticles of ferrite cobalt were prepared by dissolving CoCl2.6H2O and FeCl3 in ethylene glycol in a hydrothermal process. Using ethylene glycol instead of DI water as a solvent would cause to provide porous structure of ferrite cobalt. 0.05 ml of colloidal fluid of fabricated ...  Read More