Document Type : Original Research Paper


Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University


In this paper, photodetection properties of a Graphene-based device at
the third telecommunication window have been reported. The structure
of the device is a Graphene-silicon Schottky junction which has been
simulated in the form of an infrared photodetector. Graphene has specific
electrical and optical properties which makes this material a good
candidate for optoelectronic applications. Photodetection characteristic
of Graphene-silicon Schottky junction is investigated by measuring the
(current-voltage) curve at the third telecommunication window under
1550nm radiations. The DC electrical characteristic of the device is
calculated. The simulated rectifier junction has a potential barrier of
0.31eV, the ideality factor of 2.7 and the saturation current of 10-11A. The
detector responsivity under 1550nm radiations is measured about
20mA/W which is an order of magnitude larger than other Si-based
detectors in this wavelength. The internal quantum efficiency (QEin) is
calculated about 60% while the external quantum efficiency (QEex) is
measured to be 1.6%. A comprehensive theoretical justification is
presented based on Fowler theory which allows comparison between the
simulation results and the theoretical predictions. For simulating
Graphene, a user-defined material is introduced to TCAD-SILVACO
software which includes all electrical and optical properties of this novel
2D material. Graphene optical properties, specifically at near-IR region
(up to 2um wavelength), have been extracted from the real measurement
results. Graphene is a Si-compatible material which can provide a
sensitive IR detector integrated with other Si-based devices

Graphical Abstract

Simulation of IR Detector at Communication Window of 1550nm based on Graphene


[1] K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firso, “Electric field effect in atomically thin carbon films,” Science, vol. 306, no. 5696, pp. 666-669, 2004.
[2] F.H.L. Koppens, T. Mueller, Ph. Avouris, A.C. Ferrari, M.S. Vitiello , and M. Polini, “Photodetectors based on Graphene, other two-dimensional materials and hybrid systems,” Nature Nanotechnology, vol. 9, no. 10, pp. 780-793, 2014.
[3] M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, and J. Stake, “Graphene-Si Schottky IR detector,” IEEE Journal of Quantum Electronics, vol. 49, no. 7, pp. 589-594, 2013.
[4] F. Xia, “Graphene and beyond for ultrafast optical communications and interconnects,” in Proc. Optical Fiber Communication Conf., pp. Tu3E-3. Optical Society of America, California, United States, 2014.
[5] F. Bonaccorso, Z. Sun, T. Hasan, and A.C. Ferrari, “Graphene photonics and optoelectronics,” Nature Photonics, vol. 4, no. 9, pp. 611-622, 2010.
[6] M. Amirmazlaghani and F. Raissi, “Photo-detection measurement results of Graphene-Si schottky diode undermillimeter electromagnetic radiations,” ICNS5, Proceedings of the 5th International Conference on Nanostructures, Kish Island, Iran, 6-9 March, 2014.
[7] M. Amirmazlaghani, “Room temperature W-band detector based on Graphene diode,” SPIE Photonics Europe 2016 conf., Brussels, Belgium, 2016.
[8] D. Bartolomeo, “Graphene Schottky diodes: An experimental review of the rectifying Graphene/semiconductor heterojunction,” Physics Reports, vol. 606, pp. 1-58, 2016.
[9] G.Y. Xu, et al., “High speed, low noise ultraviolet photodetectors based on GaN pin and AlGaN (p)-GaN (i)-GaN (n) structures,” Applied Physics Letters, vol. 71, pp. 2154-2156, 1997.
[10] V. Ryzhii, M. Ryzhii, V. Mitin, and T. Otsuji, “Terahertz and infrared photodetection using pin multiple-Graphene-layer structures,” Journal of Applied Physics, vol. 107, no. 5, p. 054512, 2010.
[11] Chitara, L.S. Panchakarla, S.B. Krupanidhi, and C.N.R. Rao, “Infrared photodetectors based on reduced Graphene oxide and Graphene nanoribbons,” Advanced Materials, vol. 23, no. 45, pp. 5419-5424, 2011.
[12] Y. Zhu, S. Murali, W. Cai, X. Li, J.W. Suk, J.R. Potts, and R.S. Ruoff, “Graphene and Graphene oxide: synthesis, properties, and applications,” Advanced Materials, vol. 22, no. 35, pp. 3906- 3924, 2010.
[13] Y. Yao, R. Shankar, P. Rauter, Y. Song, J. Kong, M. Loncar, and F. Capasso, “High-responsivity mid-infrared Graphene detectors with antenna-enhanced photocarrier generation and collection,” Nano Letters, vol. 14, no. 7, pp. 3749-3754, 2014.
[14] M. El Besseghi, A. Aissat, and D. Decoster, “Simulation of the Metal-Semiconductor-Metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 μm,” OptikInternational Journal for Light and Electron Optics, vol. 125, no. 11, pp. 2543-2546, 2014.
[15] F.H.L. Koppens, T. Mueller, Ph. Avouris, A.C. Ferrari, M.S. Vitiello, and M. Polini, “Photodetectors based on Graphene, other two-dimensional materials and hybrid systems,” Nature Nanotechnology, vol. 9, no. 10, pp. 780-793, 2014.
[16] M.K. Fai, C.H. Lui, J. Shan, and T.F. Heinz, “Observation of an electric-field-induced band gap in bilayer Graphene by infrared spectroscopy,” Physical Review Letters, vol. 102, no. 25, pp. 256405, 2009.
[17] F. Ghahramani, M. Amirmazlaghani, and F. Raissi, “Evaluation of photodetection properties of graphene-silicon schottky IR detector,” International Journal of Green Nanotechnology, vol. 4, no. 4, pp. 464-469, 2012.
[18] X. Li, et al., “Graphene‐on‐Silicon Schottky junction solar cells,” Advanced Materials, vol. 22, no. 25 , pp. 2743-2748, 2010.
[19] Ch. Chen, et al., “Graphene-silicon Schottky diodes,” Nano Letters, vol. 11, no. 5, pp. 1863-1867, 2011.
[20] J.J. Zeng, et al., “Schottky barrier inhomogeneity for Graphene/Si-nanowire arrays/n-type Si Schottky diodes,” Applied Physics Letters, vol. 104, no. 13, pp. 133506, 2014.
[21] P. Lv, et al., “High-sensitivity and fast-response Graphene/crystalline Silicon schottky junction-based near-IR photodetectors,” IEEE Electron Device Letters, vol. 34, no. 10, pp. 1337-1339, 2013.
[22] Y. An, et al., “Metal-semiconductor-metal photodetectors based on Graphene/p-type Silicon Schottky junctions,” Applied Physics Letters, vol. 102, no. 1, pp. 013110, 2013.
[23] D. Sinha, and U.L. Ji, “Ideal Graphene/Silicon Schottky junction diodes,” Nano Letters, vol. 14, no. 8, pp. 4660-4664, 2014.
[24] G. Fan, et al. “Graphene/Silicon nanowire Schottky junction for enhanced light harvesting,” ACS Applied Materials & Interfaces, vol. 3, no. 3, pp.721-725, 2011.
[25] J.H. Lin, J.J. Zeng, and Y. Jon Lin, “Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment,” Thin Solid Films, vol. 550, pp. 582-586, 2014.
[26] M. Mohammed, et al., “Junction investigation of Graphene/Silicon Schottky diodes,” Nanoscale Research Letters, vol. 7, no. 1 p. 302, 2012.
[27] T. Low, L. Martin-Moreno, W. Zhu, F. Guinea, M. Freitag, and P. Avouris, “Substrate-sensitive mid-infrared photoresponse in Graphene,” ACS Nano, vol. 8, no. 8, pp. 8350-8356, 2014.
[28] B.G. Streetman and B. Sanjay Kumar, Solid state electronic devices. Prentice-Hall, 2005.
[29] S.M. Sze and K.N. Kwok, Physics of semiconductor devices, John wiley & sons, 2006.
[30] D. Dwivedi and P. Chakrabarti, “Modeling and ATLAS simulation of Hg Cd Te based MWIR photo detector for free space optical communication,” In IEEE International Conference on Recent Advances in Microwave Theory and Applications, , pp. 412-415, 2008.
[31] R.H. Fowler and L. Nordheim, “Electron emission in intense electric fields,” in Proc. The Royal Society of London A: Mathematical, Physical and Engineering Sciences, vol. 119, no. 781, The Royal Society, 1928.
[32] F. Raissi, “A possible explanation for high quantum efficiency of PtSi/porous Si Schottky detectors,” IEEE Transactions on Electro. Devices, vol. 50, no. 4, pp. 1134-1137, 2003.
[33] F. Raissi and N.A. Sheeni, “Highly sensitive near IR detectors using n-type porous Si,” Sensors and Actuators A: Physical, vol. 104, no. 2, 117-120, 2003
[34] S. Thongrattanasiri, F.H.L. Koppens, and F. Javier Garcia De Abajo, “Complete optical absorption in periodically patterned Grapheme,” Physical Review Letters, vol. 108, no. 4, p. 047401, 2012. [35] E. Mercer, “Platinum silicide/silicon interface studies,” Stanford Univ., CA, USA, Tech. Rep. RL-TR-91-272, Oct. 1991.


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