Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell

Ahmadi, S.M.; Parandin, F.

doi:10.22061/jecei.2018.743

Document Type : Original Research Paper

Authors

Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

https://doi.org/10.22061/jecei.2018.743

Abstract

A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only structural parameters are optimized. In the present structure, a thin layer of Cd-S is used as the anti-reflector window layer. The cell is simulated using ATLAS-SILVACO software and its maximum efficiency is computed to be 37.23%. Considering the supposed structure, the findings show that the efficiency of this solar cell, which is 37.32%, is so far the highest reported efficiency amongst all solar cells.

Graphical Abstract

Keywords

20.1001.1.23223952.2017.5.2.8.8

References

[1] A. Becquerel, “Mémoire sur les effets électriques produits sous linfluence des rayons solaires,” Comptes Rendus, vol. 9, pp. 561-567, 1839.

[2] W. G. Adams and R. Day, “The action of light on selenium,” Phil. Trans. Soc. London, vol. 167, pp. 313-349, 1877.

[3] D. Chapin, C. Fuller, and G. Pearson, “A new silicon p–n junction photocell for converting solar radiation into electrical power,” J. Appl. Phys., vol. 25, no. 5, pp. 676–677, 1954.

[4] A. Bett, F. Dimroth, G. Stollwerck, and O. Sulima, “III-V compounds for solar cell applications,” Appl. Phys. A, vol. 69, no. 2, pp. 119–29, 1999.

[5] R. Moon, L. James, H. Vander Plas, T. Yep, G. Antypas, and Y. Chai, “Multi-gap solar cell requirements and the performance of algaas and si cells in concentrated sun light, in Proc. 13th Photovoltaic specialists conference, vol. 1, pp. 859–867, Washington, USA, 1978.

[6] A. Datas and C. Algora “Global optimization of solar thermophotovoltaic systems,” Progress in Photovoltaics, vol. 21, pp. 1040–1055, 2012.

[7] A. Kongkanand, K. Tvrdy, K. Takechi, M. Kuno, and P. V. Kamat, “Quantum dot solar cells tuning photoresponse through size and shape control of cdse-tio2 architecture,” J. Am. Chem. Soc, vol. 130, no. 12, pp. 4007–4015, 2008.

[8] A. Le Bris and J. F. Guillemoles, “Hot carrier solar cells: achievable efficiency accounting for heat losses in the absorber and through contacts,” Appl. Phys. Lett., vol. 97, no. 11, p. 113506, 2010.

[9] F. Alharbi and S. Kais, “Theoretical limits of photovoltaics efficiency and possible improvements by intuitive approaches learned from photosynthesis and quantum coherence,” Renewable and Sustainable Energy Reviews, vol. 43, pp. 1073–1089, 2015.

[10] L. Hsu and W. Walukiewicz, “Modeling of InGaN/Si tandem solar cells,” J. Appl. Phys., vol. 104, no. 2, pp. 1-7, 2008.

[11] Z. Li, H. Xiao, X. Wang, C. Wang, Q. Deng, L. Jing, J. Ding, and X. Hou, “Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell,” Phys. B Condensed Matter, vol. 414, pp. 110-114, 2013.

[12] S. W. Feng1, C. M. Lai , C. Y. Tsai, and L. Wei Tu, “Numerical simulation of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells,” Nanoscale Res. Lett., vol. 9, no. 652, pp. 1-10, 2014.

[13] H. Hamzaoui, A. S. Bouazzi, and B. Rezig, “Theoretical possibilities of InxGa1-xN tandem PV structures,” Solar Energy Materials and Solar Cells, vol. 87, no. 1–4, pp. 595–603, 2005

[14] S. Nacer and A. Aissat, “Simulation and optimization of current matching multi-junction InGaN solar cells,” Opt. Quantum Electron,vol. 47, no. 12, pp. 3863–3870, 2015.

[15] X. Zhang, X. Wang, H. Xiao, C. Yang, J. Ran, C. Wang, Q. Hou, J. Li, and Z. Wang, “Theoretical design and performance of In_x- Ga₁-_xN two-junction solar cells,” J. Phys. D. Appl. Phys. vol. 41, no. 24, pp. 1-6, 2008.

LETTERS TO EDITOR

Journal of Electrical and Computer Engineering Innovations (JECEI) welcomes letters to the editor for the post-publication discussions and corrections which allows debate post publication on its site, through the Letters to Editor. Letters pertaining to manuscript published in JECEI should be sent to the editorial office of JECEI within three months of either online publication or before printed publication, except for critiques of original research. Following points are to be considering before sending the letters (comments) to the editor.

[1] Letters that include statements of statistics, facts, research, or theories should include appropriate references, although more than three are discouraged.

[2] Letters that are personal attacks on an author rather than thoughtful criticism of the author’s ideas will not be considered for publication.

[3] Letters can be no more than 300 words in length.

[4] Letter writers should include a statement at the beginning of the letter stating that it is being submitted either for publication or not.

[5] Anonymous letters will not be considered.

[6] Letter writers must include their city and state of residence or work.

[7] Letters will be edited for clarity and length.

Name *

Email Address *

Affiliation *

Comments *

Security Code *

Journal of Electrical and Computer Engineering Innovations (JECEI)

Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell

References

References

Send comment about this article

Volume 5, Issue 2 - Serial Number 10
July 2017
Pages 157-162

Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell

References

References

Send comment about this article

Volume 5, Issue 2 - Serial Number 10July 2017Pages 157-162

Volume 5, Issue 2 - Serial Number 10
July 2017
Pages 157-162