Feasibility of Digital Circuit Design based on Nanoscale Field-Effect Bipolar Junction Transistor

Shokri, A.; Amirmazlaghani, M.

doi:10.22061/jecei.2022.8287.503

Document Type : Original Research Paper

Authors

Electrical Engineering Department, Shahid Rajaee Teacher Training University, Tehran, Iran.

https://doi.org/10.22061/jecei.2022.8287.503

Abstract

Background and Objectives: The Field-effect Bipolar Junction Transistor (FEBJT) is a device with a bipolar junction transistor (BJT) characteristics except that it is designed with standard CMOS technology. Therefore, it can be implemented in nanometer dimensions without the usual restrictions in fabricating the nanoscale BJTs. In addition to the advantages that FEBJT has as a bipolar junction transistor in analog circuits, it can also be used to design digital circuits. Here, we have investigated the capability of FEBJT as the base of a new digital family in nanometer scales.
Methods: To do this, we have designed and simulated an inverter logic gate based on FEBJT. We have presented this logic gate's static and dynamic assessment criteria and compared these characteristics with other technologies. Also, a three-stage ring oscillator circuit based on FEBJT is designed and presented. A three-dimensional TCAD Mixed-Mode simulator has been used for the simulations.
Results: The value of maximum frequency, PDP, dynamic power, and ring frequency are calculated 0.25THz, 38×10-17 J, 94uW, and 85GHz, respectively.
Conclusion: The excellent function of the FEBJT-based inverter gate and oscillator demonstrates that this device can be used as the base of new digital circuits and can open a doorway to the nanoscale CMOS digital family.

Keywords

Main Subjects

Nano-Electronics

Open Access

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Publisher

Shahid Rajaee Teacher Training University

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Journal of Electrical and Computer Engineering Innovations (JECEI)

Feasibility of Digital Circuit Design based on Nanoscale Field-Effect Bipolar Junction Transistor

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References

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Volume 11, Issue 1
January 2023
Pages 33-40

Feasibility of Digital Circuit Design based on Nanoscale Field-Effect Bipolar Junction Transistor

References

References

Send comment about this article

Volume 11, Issue 1January 2023Pages 33-40

Volume 11, Issue 1
January 2023
Pages 33-40